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VISHAY
SFH614A
Vishay Semiconductors
Optocoupler, Phototransistor Output, 300 V BVCEO
Features
* High Isolation Test Voltage, 5300 VRMS * High Collector-Emitter Voltage, VCEO = 300 V * Standard Plastic DIP-4 Package
Agency Approvals
* UL File #E52744 System Code H or J * CSA 93751
i179060
A1 C
2
4 3
C E
Description
The SFH614A features a high collector-emitter voltage and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits.
Order Information
Part SFH614A SFH614A-X009 Remarks CTR > 50 %, DIP-4 CTR > 50 %, SMD-4 (option 9)
For additional information on the available options refer to Option Information.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Reverse voltage DC Forward current Surge forward current Derate linearly from 25 C Total power dissipation Pdiss t 10 s Test condition Symbol VR IF IFSM Value 6.0 60 2.5 1.33 100 Unit V mA A mW/C mW
Output
Parameter Collector-emitter voltage Emitter-collector voltage Collector current t 1.0 ms Derate linearly from 25 C Total power dissipation Pdiss Test condition Symbol VCEO VECO IC IC Value 300 7.0 50 100 2.00 150 Unit V V mA mA mW/C mW
Document Number 83670 Rev. 1.3, 19-Apr-04
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SFH614A
Vishay Semiconductors Coupler
Parameter Derate linearly from 25 C Total power dissipation Isolation test voltage between input and output, climate acc. to IEC 60068-1 : 1988 (T = 1.0 s) Creepage distance Clearance Insulation thickness between emitter and detector Comparative tracking index acc. to DIN IEC 112/VDE 0303, part 1 : 06-84 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Junction temperature Soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tj Tsld Ptot VISO Test condition Symbol Value 3.33 250 5300
VISHAY
Unit mW/C mW VRMS
7.0 7.0 0.4 175
mm mm mm
1012 1011 - 55 to +150 - 55 to +100 100 260
C C C C
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Reverse current Capacitance Test condition IF = 10 mA VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF IR CO Min Typ. 1.15 0.02 14 Max 1.5 10 Unit V A pF
Output
Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-emitter dark current Collector-emitter capacitance Test condition ICE = 100 A IEC = 10 A VCE = 10 V VCE = 10 V, f = 1.0 MHz Symbol BVCEO BVECO ICEO CCE Min 300 7.0 15 8.0 1.0 Typ. Max Unit V V A pF
Coupler
Parameter Collector-emitter saturation voltage Coupling capacitance Test condition IF = 20 mA, IC = 1.0 mA VI-O = 0 V, f = 1.0 MHz Symbol VCEsat CC Min Typ. Max 0.3 0.5 Unit V V
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Document Number 83670 Rev. 1.3, 19-Apr-04
VISHAY
Current Transfer Ratio
Parameter Current Transfer Ratio Test condition IF = 10 mA, VCE = 10 V Symbol CTR Min 50 Typ.
SFH614A
Vishay Semiconductors
Max
Unit %
Switching Characteristics
Parameter Turn on time Turn off time Rise time Fall time Test condition VCE = 2.0 V, IC = 2.0 mA, RL = 100 VCE = 2.0 V, IC = 2.0 mA, RL = 100 VCE = 2.0 V, IC = 2.0 mA, RL = 100 VCE = 2.0 V, IC = 2.0 mA, RL = 100 Symbol ton toff tr tf Min Typ. 6.0 6 3.0 5.0 10 12 Max Unit s s s s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
100.0
Forward Current, IF (mA) Collector Current, IC (mA)
25 IF = 20 mA 20 15 10 5 0 0 100 200 300 400 500 Collector-Emitter Voltage, VCE (mV)
iSFH614A_03
-40C 25C
10.0
1.0
100C
0.1
.01 0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
Forward Voltage, VF (V)
iSFH614A_01
Fig. 1 Forward Current vs. Forward Voltage
Fig. 3 Collector Current vs. Collector Emitter Voltage
10000
Collector Current, IC (mA)
100C
Collector Current, IC (mA)
7 6 5 4 3 2 1 0 0 100 200 300 400 500 100C IF = 10 mA -40C 25C
1000 100 10 1 0 0 50 100 150 200 250 300 350 Collector-Emitter Voltage, VCE (mV) 25C 0C
Collector-Emitter Voltage, VCE (mV)
iSFH614A_04
iSFH614A_02
Fig. 2 Collector-Emitter Dark Current vs. Collector-Emitter Voltage
Fig. 4 Collector Current vs. Collector Emitter Voltage
Document Number 83670 Rev. 1.3, 19-Apr-04
www.vishay.com 3
SFH614A
Vishay Semiconductors
VISHAY
VCC Input Pulse 10% 90% tr ton tf t off Output Pulse I F f = 5.0 kHz DF = 50% RL VO =V CE
iSFH614A_06
iSFH614A_07
Fig. 5 Switching Waveform
Fig. 6 Switching Schematic
Package Dimensions in Inches (mm)
2
1 pin one ID
.255 (6.48) .268 (6.81)
ISO Method A
3
4
.179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .130 (3.30) .150 (3.81) 4 typ. .018 (.46) .022 (.56) 10 .020 (.508 ) .035 (.89) .050 (1.27) .100 (2.54) 3-9 .300 (7.62) typ.
.230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30)
i178027
.008 (.20) .012 (.30)
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Document Number 83670 Rev. 1.3, 19-Apr-04
VISHAY
SFH614A
Vishay Semiconductors
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.0040 (.102) .0098 (.249)
.020 (.51) .040 (1.02)
.012 (.30) typ.
.315 (8.00) min.
15 max.
18449
Document Number 83670 Rev. 1.3, 19-Apr-04
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SFH614A
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83670 Rev. 1.3, 19-Apr-04

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